Publicação
Photothermoelectric AZO/SiO2/NiO Device
| Resumo: | Transparent-conductive-oxide (TCO) materials and transparent devices combining photovoltage and thermoelectric effects are still scarce. Hence, a new transparent-conductive-oxide/insulating/transparent-semiconductor-oxide (TCO-I-TSO) structure combining such effects is developed. It is made of aluminum-doped zinc oxide (AZO)/SiO2/NiO thin films sequentially deposited on glass substrates. AZO exhibits thermo and photovoltage in response to gradient temperature and absorption of UV photons, while NIR photons absorption in the NiO layer. Photovoltage appears in the plane between the AZO and NiO layer when the whole sample is irradiated with near infrared light, and it also depends on the thickness of the SiO2 layer. This photovoltage is continuously monitored on samples placed in a glass window facing south. Throughout the day, the photovoltage varies from 0 to 300 µV proportionally to the light intensity. |
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| Autores principais: | Bianchi, Catarina |
| Outros Autores: | Marques, Ana; Ferreira, Isabel |
| Assunto: | infrared absorption photothermoelectrics transparent devices General Materials Science Mechanics of Materials Industrial and Manufacturing Engineering |
| Ano: | 2023 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade Nova de Lisboa |
| Idioma: | inglês |
| Origem: | Repositório Institucional da UNL |
| Resumo: | Transparent-conductive-oxide (TCO) materials and transparent devices combining photovoltage and thermoelectric effects are still scarce. Hence, a new transparent-conductive-oxide/insulating/transparent-semiconductor-oxide (TCO-I-TSO) structure combining such effects is developed. It is made of aluminum-doped zinc oxide (AZO)/SiO2/NiO thin films sequentially deposited on glass substrates. AZO exhibits thermo and photovoltage in response to gradient temperature and absorption of UV photons, while NIR photons absorption in the NiO layer. Photovoltage appears in the plane between the AZO and NiO layer when the whole sample is irradiated with near infrared light, and it also depends on the thickness of the SiO2 layer. This photovoltage is continuously monitored on samples placed in a glass window facing south. Throughout the day, the photovoltage varies from 0 to 300 µV proportionally to the light intensity. |
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