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Investigation of dielectronic recombination in neon ions using EBIT

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Resumo:Electron Beam Ion Traps (EBITs) provide a controlled environment for studying electron-ion interactions, particularly in highly charged ions (HCIs), and enable precise measurement of processes, such as dielectronic recombination (DR). Using the compact Dresden EBIT at Jagiellonian University, we present new experimental data on DR in neon ions, collected for electron energy scanned in range of 700 to 1000 eV. The data were obtained with a silicon-drift X-ray detector (Bruker XFlash 5030), and results indicate resonant structures corresponding to DR, with the observed resonant-like Kβ emission primarily attributed to He-like neon ions. However, low statistical precision highlights the challenges of achieving optimal signal quality in this setup, particularly due to low detection efficiency in the K-shell neon energy range. Planned improvements, including repositioning the detector closer to the trap and removing the beryllium window, are expected to enhance resolution and data acquisition efficiency in future studies.
Autores principais:Biela-Nowaczyk, W.
Outros Autores:Banaś, D.; Grilo, F.; Jabłoński; Stachura, R.; Warczak, A.
Assunto:Data analysis Ion sources (positive ions, negative ions, electron cyclotron resonance (ECR), electron beam (EBIS)) Instrumentation Mathematical Physics
Ano:2025
País:Portugal
Tipo de documento:artigo
Tipo de acesso:acesso aberto
Instituição associada:Universidade Nova de Lisboa
Idioma:inglês
Origem:Repositório Institucional da UNL

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