Publicação
Wideband CMOS low noise amplifiers
| Resumo: | Modern fully integrated receiver architectures, require inductorless circuits to achieve their potential low area, low cost, and low power. The low noise amplifier (LNA), which is a key block in such receivers, is investigated in this thesis. LNAs can be either narrowband or wideband. Narrowband LNAs use inductors and have very low noise figure, but they occupy a large area and require a technology with RF options to obtain inductors with high Q. Recently, wideband LNAs with noise and distortion cancelling, with passive loads have been proposed, which can have low NF, but have high power consumption. In this thesis the main goal is to obtain a very low area, low power, and low-cost wideband LNA. First, it is investigated a balun LNA with noise and distortion cancelling with active loads to boost the gain and reduce the noise figure (NF). The circuit is based on a conventional balun LNA with noise and distortion cancellation, using the combination of a common-gate (CG) stage and common-source (CS) stage. Simulation and measurements results, with a 130 nm CMOS technology, show that the gain is enhanced by about 3 dB and the NF is reduced by at least 0.5 dB, with a negligible impact on the circuit linearity (IIP3 is about 0 dBm). The total power dissipation is only 4.8 mW, and the active area is less than 50 x 50 m2 . It is also investigated a balun LNA in which the gain is boosted by using a double feedback structure.We propose to replace the load resistors by active loads, which can be used to implement local feedback loops (in the CG and CS stages). This will boost the gain and reduce the noise figure (NF). Simulation results, with the same 130 nm CMOS technology as above, show that the gain is 24 dB and NF is less than 2.7 dB. The total power dissipation is only 5.4 mW (since no extra blocks are required), leading to a figure-of-merit (FoM) of 3.8 mW1, using 1.2 V supply. The two LNA approaches proposed in this thesis are validated by simulation and by measurement results, and are included in a receiver front-end for biomedical applications (ISM and WMTS), as an example; however, they have a wider range of applications. |
|---|---|
| Autores principais: | Bastos, Ivan Iuri Alves |
| Assunto: | RC LNA CMOSWideband LNA Noise and distortion cancelling Active loads RF Front–end Receivers |
| Ano: | 2015 |
| País: | Portugal |
| Tipo de documento: | tese de doutoramento |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade Nova de Lisboa |
| Idioma: | inglês |
| Origem: | Repositório Institucional da UNL |
| _version_ | 1865920619107844096 |
|---|---|
| author | Bastos, Ivan Iuri Alves |
| author_facet | Bastos, Ivan Iuri Alves Bastos, Ivan Iuri Alves |
| author_role | author |
| contributor_name_str_mv | Oliveira, Luís Silva, Manuel RUN |
| country_str | PT |
| creators_json_str | [{\"Person.name\":\"Bastos, Ivan Iuri Alves\"}] |
| datacite.contributors.contributor.contributorName.fl_str_mv | Oliveira, Luís Silva, Manuel RUN |
| datacite.creators.creator.creatorName.fl_str_mv | Bastos, Ivan Iuri Alves |
| datacite.date.Accepted.fl_str_mv | 2015-12-01T00:00:00Z |
| datacite.date.available.fl_str_mv | 2016-02-25T10:54:13Z |
| datacite.date.embargoed.fl_str_mv | 2016-02-25T10:54:13Z |
| datacite.rights.fl_str_mv | http://purl.org/coar/access_right/c_abf2 |
| datacite.subjects.subject.fl_str_mv | RC LNA CMOSWideband LNA Noise and distortion cancelling Active loads RF Front–end Receivers |
| datacite.titles.title.fl_str_mv | Wideband CMOS low noise amplifiers |
| dc.contributor.none.fl_str_mv | Oliveira, Luís Silva, Manuel RUN |
| dc.creator.none.fl_str_mv | Bastos, Ivan Iuri Alves |
| dc.date.Accepted.fl_str_mv | 2015-12-01T00:00:00Z |
| dc.date.available.fl_str_mv | 2016-02-25T10:54:13Z |
| dc.date.embargoed.fl_str_mv | 2016-02-25T10:54:13Z |
| dc.format.none.fl_str_mv | application/pdf |
| dc.identifier.none.fl_str_mv | http://hdl.handle.net/10362/16572 |
| dc.language.none.fl_str_mv | eng |
| dc.rights.none.fl_str_mv | http://purl.org/coar/access_right/c_abf2 |
| dc.subject.none.fl_str_mv | RC LNA CMOSWideband LNA Noise and distortion cancelling Active loads RF Front–end Receivers |
| dc.title.fl_str_mv | Wideband CMOS low noise amplifiers |
| dc.type.none.fl_str_mv | http://purl.org/coar/resource_type/c_db06 |
| description | Modern fully integrated receiver architectures, require inductorless circuits to achieve their potential low area, low cost, and low power. The low noise amplifier (LNA), which is a key block in such receivers, is investigated in this thesis. LNAs can be either narrowband or wideband. Narrowband LNAs use inductors and have very low noise figure, but they occupy a large area and require a technology with RF options to obtain inductors with high Q. Recently, wideband LNAs with noise and distortion cancelling, with passive loads have been proposed, which can have low NF, but have high power consumption. In this thesis the main goal is to obtain a very low area, low power, and low-cost wideband LNA. First, it is investigated a balun LNA with noise and distortion cancelling with active loads to boost the gain and reduce the noise figure (NF). The circuit is based on a conventional balun LNA with noise and distortion cancellation, using the combination of a common-gate (CG) stage and common-source (CS) stage. Simulation and measurements results, with a 130 nm CMOS technology, show that the gain is enhanced by about 3 dB and the NF is reduced by at least 0.5 dB, with a negligible impact on the circuit linearity (IIP3 is about 0 dBm). The total power dissipation is only 4.8 mW, and the active area is less than 50 x 50 m2 . It is also investigated a balun LNA in which the gain is boosted by using a double feedback structure.We propose to replace the load resistors by active loads, which can be used to implement local feedback loops (in the CG and CS stages). This will boost the gain and reduce the noise figure (NF). Simulation results, with the same 130 nm CMOS technology as above, show that the gain is 24 dB and NF is less than 2.7 dB. The total power dissipation is only 5.4 mW (since no extra blocks are required), leading to a figure-of-merit (FoM) of 3.8 mW1, using 1.2 V supply. The two LNA approaches proposed in this thesis are validated by simulation and by measurement results, and are included in a receiver front-end for biomedical applications (ISM and WMTS), as an example; however, they have a wider range of applications. |
| dirty | 0 |
| eu_rights_str_mv | openAccess |
| format | doctoralThesis |
| fulltext.url.fl_str_mv | https://run.unl.pt/bitstreams/06f7dd2d-d20f-4dd0-9687-2180457bc6cc/download |
| funding.funder.alternateName_str_mv | FCT |
| funding.funder.identifier_str_mv | http://doi.org/10.13039/501100001871 |
| funding.funder.name_str_mv | Fundação para a Ciência e a Tecnologia |
| id | run_98f7865d2f2188a5a5cc81c4e8f8747f |
| identifier.url.fl_str_mv | http://hdl.handle.net/10362/16572 |
| instacron_str | unl |
| institution | Universidade Nova de Lisboa |
| instname_str | Universidade Nova de Lisboa |
| language | eng |
| network_acronym_str | run |
| network_name_str | Repositório Institucional da UNL |
| oai_identifier_str | oai:run.unl.pt:10362/16572 |
| organization_str_mv | urn:organizationAcronym:unl |
| person_str_mv | Bastos, Ivan Iuri Alves |
| publishDate | 2015 |
| reponame_str | Repositório Institucional da UNL |
| repository_id_str | urn:repositoryAcronym:run |
| service_str_mv | urn:repositoryAcronym:run |
| spelling | engpt_PTModern fully integrated receiver architectures, require inductorless circuits to achieve their potential low area, low cost, and low power. The low noise amplifier (LNA), which is a key block in such receivers, is investigated in this thesis. LNAs can be either narrowband or wideband. Narrowband LNAs use inductors and have very low noise figure, but they occupy a large area and require a technology with RF options to obtain inductors with high Q. Recently, wideband LNAs with noise and distortion cancelling, with passive loads have been proposed, which can have low NF, but have high power consumption. In this thesis the main goal is to obtain a very low area, low power, and low-cost wideband LNA. First, it is investigated a balun LNA with noise and distortion cancelling with active loads to boost the gain and reduce the noise figure (NF). The circuit is based on a conventional balun LNA with noise and distortion cancellation, using the combination of a common-gate (CG) stage and common-source (CS) stage. Simulation and measurements results, with a 130 nm CMOS technology, show that the gain is enhanced by about 3 dB and the NF is reduced by at least 0.5 dB, with a negligible impact on the circuit linearity (IIP3 is about 0 dBm). The total power dissipation is only 4.8 mW, and the active area is less than 50 x 50 m2 . It is also investigated a balun LNA in which the gain is boosted by using a double feedback structure.We propose to replace the load resistors by active loads, which can be used to implement local feedback loops (in the CG and CS stages). This will boost the gain and reduce the noise figure (NF). Simulation results, with the same 130 nm CMOS technology as above, show that the gain is 24 dB and NF is less than 2.7 dB. The total power dissipation is only 5.4 mW (since no extra blocks are required), leading to a figure-of-merit (FoM) of 3.8 mW1, using 1.2 V supply. The two LNA approaches proposed in this thesis are validated by simulation and by measurement results, and are included in a receiver front-end for biomedical applications (ISM and WMTS), as an example; however, they have a wider range of applications.application/pdfpt_PTWideband CMOS low noise amplifiersBastos, Ivan Iuri AlvesOliveira, LuísSilva, ManuelHostingInstitutionOrganizationalRUNe-mailmailto:run@unl.ptrun@unl.ptURNurn:tid:1014161562016-02-25T10:54:13Z2015-122016-022015-12-01T00:00:00ZHandlehttp://hdl.handle.net/10362/16572http://purl.org/coar/access_right/c_abf2open accessRC LNACMOSWideband LNANoise and distortion cancellingActive loadsRF Front–end Receivers3905855 bytesFundação para a Ciência e a TecnologiaMOSFET-ONLY LOW NOISE AMPLIFIERSCrossref Funder IDhttp://doi.org/10.13039/501100001871literaturehttp://purl.org/coar/resource_type/c_db06doctoral thesishttp://purl.org/coar/access_right/c_abf2application/pdffulltexthttps://run.unl.pt/bitstreams/06f7dd2d-d20f-4dd0-9687-2180457bc6cc/download |
| spellingShingle | Wideband CMOS low noise amplifiers Wideband CMOS low noise amplifiers Bastos, Ivan Iuri Alves RC LNA CMOSWideband LNA Noise and distortion cancelling Active loads RF Front–end Receivers Bastos, Ivan Iuri Alves RC LNA CMOSWideband LNA Noise and distortion cancelling Active loads RF Front–end Receivers |
| status | NEW |
| subject.fl_str_mv | RC LNA CMOSWideband LNA Noise and distortion cancelling Active loads RF Front–end Receivers |
| title | Wideband CMOS low noise amplifiers |
| title_full | Wideband CMOS low noise amplifiers |
| title_fullStr | Wideband CMOS low noise amplifiers Wideband CMOS low noise amplifiers |
| title_full_unstemmed | Wideband CMOS low noise amplifiers Wideband CMOS low noise amplifiers |
| title_short | Wideband CMOS low noise amplifiers |
| title_sort | Wideband CMOS low noise amplifiers |
| topic | RC LNA CMOSWideband LNA Noise and distortion cancelling Active loads RF Front–end Receivers |
| topic_facet | RC LNA CMOSWideband LNA Noise and distortion cancelling Active loads RF Front–end Receivers |
| url | http://hdl.handle.net/10362/16572 |
| visible | 1 |