Publicação
Sputtering of silicon nanopowders by an argon cluster ion beam
| Resumo: | In this work an Ar + cluster ion beam with energy in the range of 10-70 keV and dose of 7.2 × 10 14 -2.3 × 10 16 cluster/cm 2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation. |
|---|---|
| Autores principais: | Zeng, Xiaomei |
| Outros Autores: | Pelenovich, Vasiliy; Wang, Zhenguo; Zuo, Wenbin; Belykh, Sergey; Tolstogouzov, Alexander; Fu, Dejun; Xiao, Xiangheng |
| Assunto: | Finite size effect Gas cluster ion beam Silicon nanoparticles Smoothing effect Sputtering General Materials Science General Physics and Astronomy Electrical and Electronic Engineering |
| Ano: | 2019 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade Nova de Lisboa |
| Idioma: | inglês |
| Origem: | Repositório Institucional da UNL |
| Resumo: | In this work an Ar + cluster ion beam with energy in the range of 10-70 keV and dose of 7.2 × 10 14 -2.3 × 10 16 cluster/cm 2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation. |
|---|