Publicação
The oxidation behaviour of mixed tungsten silicon sputtered coatings
| Resumo: | W-Si-N coatings were deposited by sputtering and their chemical composition, structure, thermal and oxidation behaviour were characterised. Si-containing films are essentially amorphous. W69Si31 film crystallises at 750 °C as [alpha]-W and W5Si3 phases whereas no significant structural transformations were observed for W24Si21N55 film up to 1000 °C, In both cases elemental diffusion (Si and N) for the substrate was detected after thermal annealing. These coatings present much better oxidation resistance than W and W45N55 coatings. |
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| Autores principais: | Louro, C. |
| Outros Autores: | Cavaleiro, A. |
| Assunto: | Oxidation resistance Suicides W-Si-N films Tungsten silicide Sputtering |
| Ano: | 1999 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade de Coimbra |
| Idioma: | inglês |
| Origem: | Estudo Geral - Universidade de Coimbra |
| Resumo: | W-Si-N coatings were deposited by sputtering and their chemical composition, structure, thermal and oxidation behaviour were characterised. Si-containing films are essentially amorphous. W69Si31 film crystallises at 750 °C as [alpha]-W and W5Si3 phases whereas no significant structural transformations were observed for W24Si21N55 film up to 1000 °C, In both cases elemental diffusion (Si and N) for the substrate was detected after thermal annealing. These coatings present much better oxidation resistance than W and W45N55 coatings. |
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