Publicação
Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots
| Resumo: | Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 μm photoluminescence is discussed. |
|---|---|
| Autores principais: | Cerqueira, M.F. |
| Outros Autores: | Stepikhova, M.; Losurdo, M.; Monteiro, T.; Soares, M.J.; Peres, M.; Neves, A.; Alves, E. |
| Assunto: | Ellipsometry Photoluminescence Silicon QD Structure |
| Ano: | 2006 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade de Aveiro |
| Idioma: | inglês |
| Origem: | RIA - Repositório Institucional da Universidade de Aveiro |
| Resumo: | Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 μm photoluminescence is discussed. |
|---|