Detalhes bibliográficos
| Resumo: | This work reports on low temperature deposition of conducing indium oxide films by a radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE) technique. The films were deposited on polyethylene terephthalate (PET) without intentional heating of the substrate and at elevated temperatures up to 150 degrees C. The material stoichiometry was accurately controlled by adjusting deposition conditions including the oxygen flow, process pressure, pumping speed, and RF-power. Besides, fine turning of the critical deposition parameters during the deposition was implemented by measuring the variation of film conductance in-situ. The film morphology was analyzed by scanning electron microscopy. Hall effect measurements were also performed to determine the relation between the deposition conditions and the electrical properties of the films. A resistivity of 4 x 10(-4) Omega-cm was reached under optimized deposition conditions. A 250 nm-thick coating with 16 Omega/sq sheet resistance shows an 82% peak value of transmittance in the visible spectral range. |
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| Autores principais: | Vygranenko, Yuri |
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| Outros Autores: | Fernandes, Miguel; Vieira, Manuela; Lavareda, Guilherme; CARVALHO, CARLOS; Brogueira, P.; Amaral, Ana |
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| Assunto: | Flexible electronics Indium oxide Thin-films Reactive thermal evaporation Electrical properties Optical properties |
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| Ano: | 2019 |
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| País: | Portugal |
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| Tipo de documento: | artigo |
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| Tipo de acesso: | acesso restrito |
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| Instituição associada: | Instituto Politécnico de Lisboa |
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| Idioma: | inglês |
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| Origem: | Repositório Científico do Instituto Politécnico de Lisboa |
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