Publicação
Large-scale, controlled growth of two-dimensional materials by chemical vapor deposition
| Resumo: | In this work, the optimization of two atmospheric pressure chemical vapor deposition systems was carried out in order to grow two different bidimensional materials, namely hBN and MoSe2. The first is an insulator with a structure similar to graphene and it is seen as an optimal candidate for several applications, in particular photonics and optoelectronics. The latter is a prominent semiconductor belonging to the family of two-dimensional transition metal dichalcogenides which demonstrated outstanding optoelectronic properties, such as thickness-dependent photoluminescence, combined with lightweight and flexibility. Several deposition parameters were investigated in parallel with an extensive characterization methodology carried out by optical microscopy, Raman spectroscopy, atomic-force microscopy, scanning electron microscopy, x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy and transmission electron microscopy. As a final result, reliable experimental procedures have been established which lead to the growth of few-layer polycrystalline hBN films (up to 20cm2 ) and μm-sized single crystals of monolayer MoSe2. Selected samples were tested in experimental devices. The fluorescent properties of 2D hBN films were probed to quantify its performance as a single-photon emission source at room temperature. A sensing device based on 2D MoSe2 was assembled to investigate the optical response of the material to various degree of tensile strain. |
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| Autores principais: | Fernandes, João Henrique de Castro |
| Assunto: | Chemical vapor deposition Hexagonal boron nitride Molybdenum diselenide Two-dimensional materials Deposição química de vapores Diseleneto de molibdénio Materiais bidimensionais Nitreto de boro hexagonal Engenharia e Tecnologia::Outras Engenharias e Tecnologias |
| Ano: | 2021 |
| País: | Portugal |
| Tipo de documento: | dissertação de mestrado |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | In this work, the optimization of two atmospheric pressure chemical vapor deposition systems was carried out in order to grow two different bidimensional materials, namely hBN and MoSe2. The first is an insulator with a structure similar to graphene and it is seen as an optimal candidate for several applications, in particular photonics and optoelectronics. The latter is a prominent semiconductor belonging to the family of two-dimensional transition metal dichalcogenides which demonstrated outstanding optoelectronic properties, such as thickness-dependent photoluminescence, combined with lightweight and flexibility. Several deposition parameters were investigated in parallel with an extensive characterization methodology carried out by optical microscopy, Raman spectroscopy, atomic-force microscopy, scanning electron microscopy, x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy and transmission electron microscopy. As a final result, reliable experimental procedures have been established which lead to the growth of few-layer polycrystalline hBN films (up to 20cm2 ) and μm-sized single crystals of monolayer MoSe2. Selected samples were tested in experimental devices. The fluorescent properties of 2D hBN films were probed to quantify its performance as a single-photon emission source at room temperature. A sensing device based on 2D MoSe2 was assembled to investigate the optical response of the material to various degree of tensile strain. |
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