Publicação
Light emission and spin-polarised hole injection in InAs/GaAs quantum dot heterostructures with Schottky contact
| Resumo: | We demonstrate the feasibility to obtain electroluminescence (EL), up to room temperature, from InGaAs self-assembled quantum dots (QDs) included in a forward-biased Schottky diode. Moreover, using a ferromagnet (FM) as the contact layer, sizable circular polarization of the EL emission in the presence of an external magnetic eld is obtained. A resonant behav- ior of the degree of circular polarization (P) as a function of applied voltage (V ), for a given value of magnetic eld, is observed. We explain our ndings using a model including tunneling of (spin-polarised) holes through the metal-semiconductor interface, transport in the near surface region of the heterostructure and out-of-equilibrium statistics of the injected carriers occupying the available states in the QD heterostructure. In particular, the resonant P(V ) dependence is related to the splitting of the qusi-Fermi level for two spin orientations in the FM. |
|---|---|
| Autores principais: | Baidus, N. V. |
| Outros Autores: | Vasilevskiy, Mikhail; Khazanova, S. V.; Zvonkov, B. N.; Meulen, H. P. van der; Calleja, J. M.; Vinã, L. |
| Assunto: | Optical properties of low-dimensional, mesoscopic, and nanoscale materials Spin transport through interfaces |
| Ano: | 2012 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | We demonstrate the feasibility to obtain electroluminescence (EL), up to room temperature, from InGaAs self-assembled quantum dots (QDs) included in a forward-biased Schottky diode. Moreover, using a ferromagnet (FM) as the contact layer, sizable circular polarization of the EL emission in the presence of an external magnetic eld is obtained. A resonant behav- ior of the degree of circular polarization (P) as a function of applied voltage (V ), for a given value of magnetic eld, is observed. We explain our ndings using a model including tunneling of (spin-polarised) holes through the metal-semiconductor interface, transport in the near surface region of the heterostructure and out-of-equilibrium statistics of the injected carriers occupying the available states in the QD heterostructure. In particular, the resonant P(V ) dependence is related to the splitting of the qusi-Fermi level for two spin orientations in the FM. |
|---|