Publicação
Post growing annealing effect on the optical, electrical and structural properties of CdSe nanocrystals embedded in silica thin films
| Resumo: | In this work post-growth annealing effect on CdSe/SiO2 thin films grown by rf-magnetron co-sputtering technique was investigated. Annealed samples were characterised by Raman scattering, grazing incidence X-ray diffraction and room temperature photoluminescence. The nanocrystals (NCs) size changed from 15 to 5 nm by varying the annealing temperature from 550 to 400 degrees C Evaporation of Se at high temperatures was invoked to explain this phenomenon. Fowler-Nordheim tunnelling mechanism was found to be responsible for carrier transport for samples with bigger CdSe NCs sizes, and which showed better photovoltaic properties. |
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| Autores principais: | Levichev, S. |
| Outros Autores: | Chahboun, A.; Rolo, Anabela G.; Conde, O.; Gomes, M. J. M. |
| Assunto: | Cadmium selenide Nanocrystalline thin films rf-magnetron co-sputtering Photoluminescence Electrical properties |
| Ano: | 2009 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso restrito |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | In this work post-growth annealing effect on CdSe/SiO2 thin films grown by rf-magnetron co-sputtering technique was investigated. Annealed samples were characterised by Raman scattering, grazing incidence X-ray diffraction and room temperature photoluminescence. The nanocrystals (NCs) size changed from 15 to 5 nm by varying the annealing temperature from 550 to 400 degrees C Evaporation of Se at high temperatures was invoked to explain this phenomenon. Fowler-Nordheim tunnelling mechanism was found to be responsible for carrier transport for samples with bigger CdSe NCs sizes, and which showed better photovoltaic properties. |
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