Publicação
Dielectric function of nanocrystalline silicon with few nanometers (<3 nm) grain size
| Resumo: | The dielectric function of nanocrystalline silicon (nc-Si) with crystallite size in the range of 1 to 3 nm has been determined by spectroscopic ellipsometry in the range of 1.5 to 5.5 eV. ATauc–Lorentz parameterization is used to model the nc-Si optical properties. The nc-Si dielectric function can be used to analyze nondestructively nc-Si thin films where nanocrystallites cannot be detected by x-ray diffraction and Raman spectroscopy. |
|---|---|
| Autores principais: | Losurdo, M. |
| Outros Autores: | Giangregorio, M. M.; Capezzuto, Pio; Bruno, G.; Cerqueira, M. F.; Alves, E.; Stepikhova, M. |
| Assunto: | Dielectric function Nanocrystalline silicon Ellipsometry |
| Ano: | 2003 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | The dielectric function of nanocrystalline silicon (nc-Si) with crystallite size in the range of 1 to 3 nm has been determined by spectroscopic ellipsometry in the range of 1.5 to 5.5 eV. ATauc–Lorentz parameterization is used to model the nc-Si optical properties. The nc-Si dielectric function can be used to analyze nondestructively nc-Si thin films where nanocrystallites cannot be detected by x-ray diffraction and Raman spectroscopy. |
|---|