Publicação
Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering
| Resumo: | Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance–voltage (C–V) combined with current–voltage (I–V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/SiO2 structure was shown to be a combination of Fowler–Nordheim tunnelling and Poole–Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured. |
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| Autores principais: | Levichev, S. |
| Outros Autores: | Chahboun, A.; Basa, P.; Rolo, Anabela G.; Barradas, N. P.; Alves, E.; Horvath, Zs. J.; Conde, O.; Gomes, M. J. M. |
| Assunto: | CdSe Nanocrystals SiO2 Charging effect |
| Ano: | 2008 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso restrito |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance–voltage (C–V) combined with current–voltage (I–V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/SiO2 structure was shown to be a combination of Fowler–Nordheim tunnelling and Poole–Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured. |
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