Detalhes bibliográficos
| Resumo: | We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications. |
|---|
| Autores principais: | Oliveira, F. |
|---|
| Outros Autores: | Fischer, I. A.; Benedetti, A.; Cerqueira, M. F.; Vasilevskiy, Mikhail; Stefanov, S.; Chiussi, S.; Schulze, J. |
|---|
| Assunto: | Self-assembled GeSn dots Molecular beam epitaxy TEM&AFM Raman |
|---|
| Ano: | 2015 |
|---|
| País: | Portugal |
|---|
| Tipo de documento: | artigo |
|---|
| Tipo de acesso: | acesso aberto |
|---|
| Instituição associada: | Universidade do Minho |
|---|
| Idioma: | inglês |
|---|
| Origem: | RepositóriUM - Universidade do Minho |
|---|