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Annealing induced effect on the physical properties of ion-beam sputtered 0.5 Ba(Zr0.2Ti0.8)O3 – 0.5 (Ba0.7Ca0.3)TiO3-δ ferroelectric thin films

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Resumo:This work reports thermal annealing induced effect on the structural, optical, chemical and ferroelectric properties of ion-beam sputtered lead-free ferroelectric 0.5 Ba(Zr0.2Ti0.8)O3 – 0.5 (Ba0.7Ca0.3)TiO3-δ (0.5BZT–0.5BCT) thin films. X-ray diffraction studies reveal that the tetragonality increases with the annealing temperature (Ta), while photoluminescence and X-ray photoelectron spectroscopy studies confirm that this effect is associated with the annihilation of the oxygen vacancies as well as changes in the Ba2+ coordination. The films annealed at 750 °C show a remarkable remnant polarization of Pr = 45.0 μC/cm2, with a coercive field of 32 kV/cm. The temperature dependence of the spontaneous polarization of the 0.5BZT–0.5BCT film reveals a mean field behavior of the polarization and the fatigue study reveals that Pr only decreases 3% after passing 109 cycles. Therefore the high remnant polarization and its high Pr stability make these films as promising candidates for memory applications
Autores principais:Oliveira, M. J. S.
Outros Autores:Silva, J. P. B.; Veltruská, K.; Matolín, V.; Sekhar, K. C.; Moreira, J. Agostinho; Pereira, M.; Gomes, M. J. M.
Assunto:Fatigue characteristics (0.5BZT–0.5BCT) thin film Ion-beam sputtering deposition X-ray photoelectron spectroscopy Ion-beam sputtering deposition technique Ciências Naturais::Ciências Físicas
Ano:2018
País:Portugal
Tipo de documento:artigo
Tipo de acesso:acesso restrito
Instituição associada:Universidade do Minho
Idioma:inglês
Origem:RepositóriUM - Universidade do Minho
Descrição
Resumo:This work reports thermal annealing induced effect on the structural, optical, chemical and ferroelectric properties of ion-beam sputtered lead-free ferroelectric 0.5 Ba(Zr0.2Ti0.8)O3 – 0.5 (Ba0.7Ca0.3)TiO3-δ (0.5BZT–0.5BCT) thin films. X-ray diffraction studies reveal that the tetragonality increases with the annealing temperature (Ta), while photoluminescence and X-ray photoelectron spectroscopy studies confirm that this effect is associated with the annihilation of the oxygen vacancies as well as changes in the Ba2+ coordination. The films annealed at 750 °C show a remarkable remnant polarization of Pr = 45.0 μC/cm2, with a coercive field of 32 kV/cm. The temperature dependence of the spontaneous polarization of the 0.5BZT–0.5BCT film reveals a mean field behavior of the polarization and the fatigue study reveals that Pr only decreases 3% after passing 109 cycles. Therefore the high remnant polarization and its high Pr stability make these films as promising candidates for memory applications