Publicação
Tri-layered Si/Co3O4/ZnO heterojunction for high-performance visible photodetection
| Resumo: | Tri-layered heterojunction devices based on oxide thin films are attracting significant attention for ultra-fast visible photodetection. However, the responsivity of these devices is still low. In this work, high performance photodetectors based on a tri-layered heterojunction of n-Si/p-Co3O4/n-ZnO were fabricated. Under no applied bias, a maximum responsivity and detectivity of 14.2 mA W−1 and 1.34 × 1012 Jones were achieved respectively, for a power density of 9.35 mW cm−2. Remarkably, a significant increase in the responsivity of approximately 864% was found when the device was biased at −2 V. This effect is understood based on the coupling of the photovoltaic and pyroelectric effects. Also, upon applying an external bias of −2 V, at a laser power density of 9.35 mW cm−2 and at a chopper frequency of 10 Hz, the device exhibits a detectivity and sensitivity of 3.4 × 1011 Jones and 2.2, respectively, together with a rise and fall time of 4 and 2 μs, respectively. Compared to high performance Al/Si/SnO/ZnO/ITO and Au/pCuI/ZnO devices, our voltage-biased Al/Si/Co3O4/ZnO/ITO devices exhibit a >40% increase in R and >10× higher D*. Furthermore, an important advantage of our PDs is the p-type component, Co3O4, which is more stable and stoichiometric than CuI and SnO, ensuring PD performance that is stable with time. Therefore, n-Si/p-Co3O4/n-ZnO heterojunction devices shows great promise for ultrafast visible photodetection. |
|---|---|
| Autores principais: | Domingues, Leonardo |
| Outros Autores: | Jayakrishnan, Ampattu R.; Kaim, Adrian; Gwozdz, Katarzyna; Istrate, Marian C.; Ghica, Corneliu; Pereira, Mario; Castro, António; Marques, L.; Hoye, Robert L. Z.; MacManus-Driscoll, Judith L.; Silva, José Pedro Basto |
| Ano: | 2024 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso restrito |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | Tri-layered heterojunction devices based on oxide thin films are attracting significant attention for ultra-fast visible photodetection. However, the responsivity of these devices is still low. In this work, high performance photodetectors based on a tri-layered heterojunction of n-Si/p-Co3O4/n-ZnO were fabricated. Under no applied bias, a maximum responsivity and detectivity of 14.2 mA W−1 and 1.34 × 1012 Jones were achieved respectively, for a power density of 9.35 mW cm−2. Remarkably, a significant increase in the responsivity of approximately 864% was found when the device was biased at −2 V. This effect is understood based on the coupling of the photovoltaic and pyroelectric effects. Also, upon applying an external bias of −2 V, at a laser power density of 9.35 mW cm−2 and at a chopper frequency of 10 Hz, the device exhibits a detectivity and sensitivity of 3.4 × 1011 Jones and 2.2, respectively, together with a rise and fall time of 4 and 2 μs, respectively. Compared to high performance Al/Si/SnO/ZnO/ITO and Au/pCuI/ZnO devices, our voltage-biased Al/Si/Co3O4/ZnO/ITO devices exhibit a >40% increase in R and >10× higher D*. Furthermore, an important advantage of our PDs is the p-type component, Co3O4, which is more stable and stoichiometric than CuI and SnO, ensuring PD performance that is stable with time. Therefore, n-Si/p-Co3O4/n-ZnO heterojunction devices shows great promise for ultrafast visible photodetection. |
|---|