Publicação
Low temperature thermocompression bonding for ultraminiaturized self‑packaged MEMS in 8‑inch wafers
| Resumo: | Device packaging is essential for ensuring the micro and nanodevice’s long‑term reliability and functionality as it provides protection against environmental hazards and mechanical stress. Gold Thermocompression Bonding has emerged as a reliable method for wafer‑level device packaging, hence, this dissertation will focus on developing an effective Gold Thermocompression Bonding method for device packaging in the INL cleanroom using existing equipment to encapsulate devices future devices created in the facility. A series of experiments were carried out to determine the optimal bonding conditions. The results demonstrated that the most effective bonding process involved preparing the sample pairs to be tested with a wet photoresist removal followed by SC1 cleaning to eliminate potential contaminants from the sample surfaces. Subsequently, a metallic stack comprising 5 nm of titanium, 10 nm of platinum, and 15 nm of gold was deposited, followed by a surface activation treatment. The samples were then subjected to a temperature of 200 ◦C and using a pressure of 40 bar in the Nanoimprint Lithography (NIL) system available in the INL cleanroom for 15 minutes. While the bonding process yielded some success, as the samples could not be separated at the end of the process, unbonded areas persisted and could not be eliminated. These inconsistencies were attributed to particle contamination. These findings highlight the necessity for further research into contamination control measures to enhance the reliability and uniformity of the gold Thermocompression Bonding process for device packaging applications in the INL cleanroom. |
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| Autores principais: | Loureiro, Rui Pedro Ferreira |
| Assunto: | Low‑temperature bonding Thermocompression bonding Gold bonding Au‑ Au bonding Wafer bonding Surface‑activated bonding Packaging |
| Ano: | 2024 |
| País: | Portugal |
| Tipo de documento: | dissertação de mestrado |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | Device packaging is essential for ensuring the micro and nanodevice’s long‑term reliability and functionality as it provides protection against environmental hazards and mechanical stress. Gold Thermocompression Bonding has emerged as a reliable method for wafer‑level device packaging, hence, this dissertation will focus on developing an effective Gold Thermocompression Bonding method for device packaging in the INL cleanroom using existing equipment to encapsulate devices future devices created in the facility. A series of experiments were carried out to determine the optimal bonding conditions. The results demonstrated that the most effective bonding process involved preparing the sample pairs to be tested with a wet photoresist removal followed by SC1 cleaning to eliminate potential contaminants from the sample surfaces. Subsequently, a metallic stack comprising 5 nm of titanium, 10 nm of platinum, and 15 nm of gold was deposited, followed by a surface activation treatment. The samples were then subjected to a temperature of 200 ◦C and using a pressure of 40 bar in the Nanoimprint Lithography (NIL) system available in the INL cleanroom for 15 minutes. While the bonding process yielded some success, as the samples could not be separated at the end of the process, unbonded areas persisted and could not be eliminated. These inconsistencies were attributed to particle contamination. These findings highlight the necessity for further research into contamination control measures to enhance the reliability and uniformity of the gold Thermocompression Bonding process for device packaging applications in the INL cleanroom. |
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