Publicação
Performance of radiofrequency circuits based on 2D technology
| Resumo: | As the IoT become more prevalent and require a massive number of devices with a small footprint to be integrated without much notice, the ability to miniaturise the electronic components while maintaining or improving their performance becomes a challenge. This challenge is associated with short-channel effects and interconnect’s heating. In recent years, 2D materials became the focus of many investigations as a possible solution to the above-mentioned problems. One of the most promising materials is graphene due to its remarkable properties, such as high carrier mobility compared to silicon. In this regard, many studies focus on the fabrication of graphene-based transistors but lack the ability to predict the device’s behaviour since there are no well-defined models. This dissertation’s main objective is to understand how to perform circuit-level simulations of graphene based transistors. In this regard, three models chosen from the literature were implemented in an EDA tool to understand which would be more reliable for DC and RF applications. Since some of the models rely on parameters extracted from real devices, an insight into how to perform measurements and extract the desired parameters is presented. The models were simulated against real data to understand the importance of simulation for more complex designs. It was possible to conclude that a semi-empirical model allows for obtaining closer results and can be used in both the DC and RF domains. The semi-empirical model allowed simulation and refinement at the circuit level of inverters, ring oscillators and frequency doublers. Moreover, the devices simulated using graphene transistors show the need for this kind of simulation to understand the operation points needed for the device’s functioning. |
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| Autores principais: | Baptista, Diogo Francisco Veiga |
| Assunto: | Graphene transistors 2D materials Radio frequency Modelling Transistor de grafeno Materiais 2D Radio frequência Modelo Engenharia e Tecnologia::Outras Engenharias e Tecnologias |
| Ano: | 2022 |
| País: | Portugal |
| Tipo de documento: | dissertação de mestrado |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | As the IoT become more prevalent and require a massive number of devices with a small footprint to be integrated without much notice, the ability to miniaturise the electronic components while maintaining or improving their performance becomes a challenge. This challenge is associated with short-channel effects and interconnect’s heating. In recent years, 2D materials became the focus of many investigations as a possible solution to the above-mentioned problems. One of the most promising materials is graphene due to its remarkable properties, such as high carrier mobility compared to silicon. In this regard, many studies focus on the fabrication of graphene-based transistors but lack the ability to predict the device’s behaviour since there are no well-defined models. This dissertation’s main objective is to understand how to perform circuit-level simulations of graphene based transistors. In this regard, three models chosen from the literature were implemented in an EDA tool to understand which would be more reliable for DC and RF applications. Since some of the models rely on parameters extracted from real devices, an insight into how to perform measurements and extract the desired parameters is presented. The models were simulated against real data to understand the importance of simulation for more complex designs. It was possible to conclude that a semi-empirical model allows for obtaining closer results and can be used in both the DC and RF domains. The semi-empirical model allowed simulation and refinement at the circuit level of inverters, ring oscillators and frequency doublers. Moreover, the devices simulated using graphene transistors show the need for this kind of simulation to understand the operation points needed for the device’s functioning. |
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