Publicação
Cu(In,Ga)Se2 thin film solar cell by magnetron sputtering
| Resumo: | The purpose of this thesis is to develop a deposition processes for Cu(In,Ga)Se2 by DC magnetron sputtering to be employed as an absorber layer in Cu(In,Ga)Se2-based photovoltaic devices. The thesis describes three deposition processes: (1) co-deposition of Cu, In, Ga and Se, where Cu, In and Ga are sputtered and Se is evaporated at the same time, (2) Cu, In, Ga deposition by sputtering followed by post-selenization and (3) a pulsed deposition of Cu, In, Ga by sputtering and Se by evaporation. A calibration of the CuInGa precursor and the Se source were performed, involving several experiments such as varying the Ar flow, applied power and substrate temperature in order to determine the influence on the film and establish the best deposition parameters. For the three processes, the Cu(In,Ga)Se2 layer was deposited onto soda lime glass (SLG) substrate coated with a molybdenum layer. The samples produced were characterized by scanning electron microscopy (SEM) for surface morphology, energy-dispersive X-ray spectroscopy (EDX) for chemical composition, stylus profilometry and/or cross-sectional SEM analysis for thickness and X-ray diffraction (XRD) for structure identification. The Cu(In,Ga)Se2 co-deposition resulted in tetragonal CIGS, as revealed by XRD. The CuInGa deposition with post-selenization and the Cu(In,Ga)Se2 pulsed deposition resulted in Cu-rich Cu(In,Ga)Se2 films, which are not desired, hence these two techniques are considered unsuitable for the CIGS deposition process. A solar cell was fabricated for each deposition process and an efficiency of 1.57% was achieved for the co-deposition solar cell. |
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| Autores principais: | Alves, Marina do Carmo |
| Assunto: | CIGS Thin film Solar cell Sputtering Filme fino Célula solar Sputtering |
| Ano: | 2018 |
| País: | Portugal |
| Tipo de documento: | dissertação de mestrado |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | The purpose of this thesis is to develop a deposition processes for Cu(In,Ga)Se2 by DC magnetron sputtering to be employed as an absorber layer in Cu(In,Ga)Se2-based photovoltaic devices. The thesis describes three deposition processes: (1) co-deposition of Cu, In, Ga and Se, where Cu, In and Ga are sputtered and Se is evaporated at the same time, (2) Cu, In, Ga deposition by sputtering followed by post-selenization and (3) a pulsed deposition of Cu, In, Ga by sputtering and Se by evaporation. A calibration of the CuInGa precursor and the Se source were performed, involving several experiments such as varying the Ar flow, applied power and substrate temperature in order to determine the influence on the film and establish the best deposition parameters. For the three processes, the Cu(In,Ga)Se2 layer was deposited onto soda lime glass (SLG) substrate coated with a molybdenum layer. The samples produced were characterized by scanning electron microscopy (SEM) for surface morphology, energy-dispersive X-ray spectroscopy (EDX) for chemical composition, stylus profilometry and/or cross-sectional SEM analysis for thickness and X-ray diffraction (XRD) for structure identification. The Cu(In,Ga)Se2 co-deposition resulted in tetragonal CIGS, as revealed by XRD. The CuInGa deposition with post-selenization and the Cu(In,Ga)Se2 pulsed deposition resulted in Cu-rich Cu(In,Ga)Se2 films, which are not desired, hence these two techniques are considered unsuitable for the CIGS deposition process. A solar cell was fabricated for each deposition process and an efficiency of 1.57% was achieved for the co-deposition solar cell. |
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