Publicação
Structural and optical studies of CdS nanocrystals embedded in silicon dioxide films
| Resumo: | Silicon dioxide films doped with nanocrystallites of CdS with a mean radius value in the range of 20 to 40 A° have been grown using the magnetron rf-sputtering technique. We have studied the combined effects of rf-power deposition, the number of semiconductor chips on the SiO2 target, and post-annealing temperature on the CdS crystal size. The optical transmission spectra display a marked blue shift of the absorption band edge of up to 400 meV which was attributed to quantum size confinement effects. The luminescence spectra show a narrow emission peak tentatively explained as being due to the recombination of electrons on shallow donor levels with confined valence band holes. |
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| Autores principais: | Rolo, Anabela G. |
| Outros Autores: | Conde, O.; Gomes, M. J. M. |
| Assunto: | CdS-doped glass films II–VI semiconductor Rf-sputtering Quantum dots Optical absorption Photoluminescence |
| Ano: | 1998 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso restrito |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | Silicon dioxide films doped with nanocrystallites of CdS with a mean radius value in the range of 20 to 40 A° have been grown using the magnetron rf-sputtering technique. We have studied the combined effects of rf-power deposition, the number of semiconductor chips on the SiO2 target, and post-annealing temperature on the CdS crystal size. The optical transmission spectra display a marked blue shift of the absorption band edge of up to 400 meV which was attributed to quantum size confinement effects. The luminescence spectra show a narrow emission peak tentatively explained as being due to the recombination of electrons on shallow donor levels with confined valence band holes. |
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