Publicação
Reversible barrier switching of ZnO/RuO2 Schottky diodes
| Resumo: | The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies. |
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| Autores principais: | Wendel, Philipp |
| Outros Autores: | Dietz, Dominik; Deuermeier, Jonas; Klein, Andreas |
| Assunto: | Oxygen vacancies Resistive switching Ruthenium oxide Schottky barrier Zinc oxide General Materials Science Condensed Matter Physics |
| Ano: | 2021 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade Nova de Lisboa |
| Idioma: | inglês |
| Origem: | Repositório Institucional da UNL |
| Resumo: | The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies. |
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