Publicação
Thin-film transistors based on p-type Cu2O thin films produced at room temperature
| Resumo: | Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102. |
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| Autores principais: | Fortunato, Elvira Maria Correia |
| Outros Autores: | Figueiredo, Vitor; Barquinha, Pedro Miguel Cândido; Elamurugu, Elangovan; Barros, Raquel; Gonçalves, Gonçalo; Park, Sang Hee Ko; Martins, Rodrigo Ferrão de Paiva; Hwang, Chisun |
| Assunto: | Bottom gate Electrical performance Field-effect mobilities On/off ratio P-type Polycrystalline structure rf-Magnetron sputtering Room temperature Electrodeposition Copper oxides Cuprous oxide |
| Ano: | 2010 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade Nova de Lisboa |
| Idioma: | inglês |
| Origem: | Repositório Institucional da UNL |
| Resumo: | Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102. |
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