Detalhes bibliográficos
| Resumo: | Solution-processed oxide semiconductors have been widely studied with the objective of achieving high-performance, sustainable and low-cost electronic devices. In this report a simple and eco-friendly water-inducement method has been developed to fabricate high-k dielectrics and hybrid thin-film transistors (TFTs); introducing metal nitrates and deionized water as the precursor materials. The AlOx dielectric films annealed at temperatures higher than 350 °C result in low leakage current densities and the dielectric constants are nearly 7. Instead of the conventional oxide semiconductors, water-induced (WI) polyvinylprrolidone (PVP) was introduced into the In2O3 solution to form a hybrid metal oxide/polymer channel layer. The 250 °C-annealed WI In2O3:PVP TFTs based on AlOx dielectric exhibit outstanding electrical performances and high stability. These promising properties were obtained at an ultra-low operating voltage of 2 V. The WI metal oxide/polymer hybrid TFTs are promising alternatives for applications in low-cost, low-consumption and eco-friendly flexible electronics. |
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| Autores principais: | Liu, Ao |
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| Outros Autores: | Liu, Guoxia; Zhu, Huihui; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai |
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| Assunto: | THIN-FILM TRANSISTORS FIELD-EFFECT TRANSISTORS HIGH-PERFORMANCE LOW-TEMPERATURE GATE DIELECTRICS ELECTRICAL PERFORMANCE COMBUSTION SYNTHESIS AQUEOUS-SOLUTION TRANSPARENT; CHANNELS General Chemical Engineering General Chemistry |
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| Ano: | 2015 |
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| País: | Portugal |
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| Tipo de documento: | artigo |
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| Tipo de acesso: | acesso aberto |
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| Instituição associada: | Universidade Nova de Lisboa |
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| Idioma: | inglês |
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| Origem: | Repositório Institucional da UNL |
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