Publicação
Fully transparent ZnO thin-film transistor produced at room temperature
| Resumo: | Fully transparent thin-film transistors (TFTs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current (IDS) as a function of drain voltage (VDS) at different gate voltages (VGS) shows the TFTs possess hard saturation with on-currents of about 0.2 mA (see Figure) and saturation mobilities of 20 cm2 V-1 s-1. The optical and electrical properties and the compatibility of the fabrication process with low-cost plastic substrates show promise for invisible and flexible electronic circuits. |
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| Autores principais: | Fortunato, Elvira |
| Outros Autores: | Barquinha, Pedro; Pimentel, A. C. M. B. G.; Gonçalves, A. M. F.; Marques, A. J. S.; Pereira, L. M. N.; Martins, Rodrigo |
| Assunto: | Field-effect transistors Zinc oxide |
| Ano: | 2005 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso a metadados |
| Instituição associada: | Universidade Nova de Lisboa |
| Idioma: | inglês |
| Origem: | Repositório Institucional da UNL |
| Resumo: | Fully transparent thin-film transistors (TFTs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current (IDS) as a function of drain voltage (VDS) at different gate voltages (VGS) shows the TFTs possess hard saturation with on-currents of about 0.2 mA (see Figure) and saturation mobilities of 20 cm2 V-1 s-1. The optical and electrical properties and the compatibility of the fabrication process with low-cost plastic substrates show promise for invisible and flexible electronic circuits. |
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